ON Semi KAF-09000-ABA-DP-BA

Chromatics:	monochrome
Pixel size x [µm]:	12
Further specification:	Broad Dynamic Range \| CERDIP Package (sidebrazed pins, CuW)
Packaging Container:	Taped Clear Cover Glass (no coatings)
Sensor size [inch/mm]:	645 1.3x
Vertical Resolution:	3085
Resolution [MP]:	9.52
Pixel size y [µm]:	12
Pins / Balls:	34

Packaging Container:

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Combining high resolution with outstanding sensitivity, the KAF-09000 image sensor has been... more

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Product information "KAF-09000-ABA-DP-BA"

Combining high resolution with outstanding sensitivity, the KAF-09000 image sensor has been specifically designed to meet the needs of next-generation low cost digital radiography and scientific imaging systems. The high sensitivity available from 12-micron square pixels combine with a low noise architecture to allow system designers to improve overall image quality, or to relax system tolerances to achieve lower cost. The excellent uniformity of the KAF-09000 image sensor improves overall image integrity by simplifying image corrections, while integrated anti-blooming protection prevents image bleed from over-exposure in bright areas of the image. To simplify device integration, the KAF-09000 image sensor uses the same pin-out and package as the KAF-16801 image sensor. The sensor utilizes a Transparent Gate Electrode to improve sensitivity compared to the use of a standard front side illuminated polysilicon electrode.

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Product Details "KAF-09000-ABA-DP-BA"

Chromatics:	monochrome
Pixel size x [µm]:	12
Further specification:	Broad Dynamic Range \| CERDIP Package (sidebrazed pins, CuW)
Packaging Container:	Taped Clear Cover Glass (no coatings)
Sensor size [inch/mm]:	645 1.3x
Vertical Resolution:	3085
Resolution [MP]:	9.52
Pixel size y [µm]:	12
Pins / Balls:	34
Manufacturer:	ON Semiconductor
Horizontal Resolution:	3085
Frame rate [fps]:	0.4
Sensor type:	CCD
Package:	DIP (Ceramic)
Shutter type:	Global shutter
Type:	Area Sensors
Aspect Ratio:	1 : 1